Characteristics of GaN-Based Bipolar Transistors on Sapphire Substrates With the n-Type Emitter Region Formed Using Si-Ion Implantation
| Autor: | Tomonobu Tsuchiya, Kazuhiro Mochizuki, Akihisa Terano |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Electron mobility
Materials science Heterostructure-emitter bipolar transistor business.industry Bipolar junction transistor Transistor Gallium nitride Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Ion implantation chemistry law Electronic engineering Optoelectronics Electrical and Electronic Engineering business Sheet resistance Common emitter |
| Zdroj: | IEEE Transactions on Electron Devices. 61:3411-3416 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2014.2346778 |
| Popis: | We have investigated the possibility of being able to create gallium nitride bipolar junction transistors (GaN BJTs) whose n-type emitter region is formed using a conventional Si-ion implantation technology. The thermal stability of the p-GaN layer, which was the most important technique in creating GaN BJTs, was found to be maintained even after annealing at 1100 °C. A Hall-effect measurement revealed that the n-type emitter region, which was formed using 2.0 × 10 15 cm -2 Si-ion implantation within the p-GaN base layer, has a sheet carrier density of 1.59 × 10 14 cm -2 (i.e., a carrier activation ratio of 8%), an electron mobility of 41.0 cm 2 /Vs, and a sheet resistance of 958 Q/sq. The fabricated GaN BJTs had a maximum dc current gain of 160 and a maximum differential current gain of 238. These results show that Si-ion implantation is a promising technique for forming an n-type emitter of GaN BJTs. However, some of the transistor characteristics were found to be limited possibly by the Si-ion implantation-induced large base resistance. |
| Databáze: | OpenAIRE |
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