A MEMS shield structure for controlling pull-in forces and obtaining increased pull-in voltages
| Autor: | J M Chen, Heinz H. Busta, C Mueller, D Furst, R Amantea, Marek Turowski |
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| Rok vydání: | 2001 |
| Předmět: |
Microelectromechanical systems
Engineering Cantilever business.industry Mechanical Engineering Field emitter array Amplifier Electrical engineering Electronic Optical and Magnetic Materials Mechanics of Materials Shield Optoelectronics Electrical and Electronic Engineering business Electrical conductor Common emitter Voltage |
| Zdroj: | Journal of Micromechanics and Microengineering. 11:720-725 |
| ISSN: | 1361-6439 0960-1317 |
| DOI: | 10.1088/0960-1317/11/6/315 |
| Popis: | By interposing a conductive shield with an opening between the movable microelectromechanical systems (MEMS) component and the substrate, it is possible to control pull-in forces and to increase pull-in voltages. Modeling results for different opening diameters are presented for a planar structure and one that contains a field emitter tip. Pull-in voltages can be increased from about 2 V (with no shield) to about 12 V with a 7 µm diameter shield hole and to 25 V with a 2 µm shield hole. This shield technology will be demonstrated on a MEMS-activated field emitter amplifier in which the gate plate of a field emitter array is thermally activated and moves with respect to the stationary tips. For a 6.7 µm diameter shield hole, the pull-in voltage is 30 V. This higher voltage, as compared to the modeling results, is caused by built-in stresses that curve the gate cantilever away from the substrate. In order for this concept to work, the field emitter operating voltage has to be smaller than the gate pull-in voltage. |
| Databáze: | OpenAIRE |
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