| Autor: |
Akira Ajisawa, Masaya Kawano, Naoki Oda, Masaru Miyoshi, Mitsuko Tomono |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
We have developed hybrid 256 by 256 focal plane arrays (FPAs) using MBE grown HgCdTe(MCT) layers on Si substrates for 10 micrometer-wavelength band detection and successfully demonstrated infrared images for the first time. The characteristics of MCT-on-Si-substrate FPAs have been compared with those for MCT-on-GaAs-substrate FPAs. MCT epilayers grown on 3-inch Si substrates used in FPAs were found to have almost the same characteristics as MCT epilayers on GaAs, including etch pit density of 1 - 2 X 10 6 cm -2 and p-type carrier concentration of 1 - 2 X 10 16 cm -3 . The 256 by 256 photodiode array consists of n + -on-p junctions formed by boron-ion implantation and ZnS films for surface passivation. It was hybridized on a silicon readout circuit with an indium bump array. The mean value of R O A for the diode array was measured and found to be 80 (Omega) cm 2 with a cutoff wavelength of 8.7 micrometer at 77 K; this is comparable to the typical value for a diode array using MCT grown on GaAs substrates. A diode array with 95% operability was placed in a camera system with which infrared images were taken, and high image sensitivity was found to be obtained. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
