P-type polycrystalline diamond layers by rapid thermal diffusion of boron

Autor:	J. Weimer, Oleh B. Krutko, Sandra Fries-Carr, P. B. Kosel, R. L. C. Wu, S. Heidger
Rok vydání:	2000
Předmět:	Surface diffusion Materials science Physics and Astronomy (miscellaneous) Doping chemistry.chemical_element Sintering Diamond engineering.material chemistry engineering Diffusion (business) Thin film Composite material Boron Ohmic contact
Zdroj:	Applied Physics Letters. 76:849-851
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.125605
Popis:	P-type diamond layers have been produced in polycrystalline diamond by means of rapid thermal diffusion (RTD) of boron. Using thin film of deposited boron as the source and temperatures near 1600 °C, solid-state diffusion of boron was achieved, forming conducting layers with average sheet resistances of about 356 Ω/square and diffused-layer thicknesses of about 0.6 μm. Ohmic contacts to the diffused layers were formed by depositing molybdenum films before the RTD step so that sintering of contacts occurred simultaneously with the diffusion. The advantages of this approach are that (a) low contact resistances are obtained and (b) only one high-temperature step is involved. Using this technique, molybdenum-diamond Schottky diodes were fabricated and found to have barrier potentials of 2.6 V and ideality factors of 1.6.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a8e9fa21b2ae99078432aabd493ec2f https://doi.org/10.1063/1.125605 Zobrazit plný text záznamu