Scanning helium ion microscope: Distribution of secondary electrons and ion channeling

Autor:	A. S. Bondarenko, O. F. Vyvenko, Yu. V. Petrov
Rok vydání:	2010
Předmět:	Ion beam deposition Ion beam Physics::Plasma Physics Chemistry Atomic physics Electron beam-induced deposition Ion gun Focused ion beam Scanning helium ion microscope Field ion microscope Secondary electrons Surfaces Coatings and Films
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:792-795
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451010050186
Popis:	The principles and features of operation of a scanning helium microscope are reviewed briefly. The measurement data on the energy distribution of secondary electrons excited by the ion beam in an Au film and on the angular dependence of the backscattered ion yield are obtained and presented for the first time. The effect of ion channeling in silicon single crystal with the (110) orientation is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a8dc49f5e4797e52beca60b45c66649 https://doi.org/10.1134/s1027451010050186 Zobrazit plný text záznamu Full text from SpringerLink