| Autor: |
Hitoshi Sakata, K. Uchihashi, Seiichi Kiyama, T. Nakai, Sadaji Tsuge, Toshiaki Baba, Mikio Taguchi |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036). |
| DOI: |
10.1109/pvsc.2000.915742 |
| Popis: |
A world record total area conversion efficiency of 20.7% and high open circuit voltage (VOC) of 719 mV were achieved on a solar cell with HIT (heterojunction with intrinsic thin-layer) structures on both sides (wafer size: 100.5 cm/sup 2/, n-type solar-grade CZ-Si). This solar cell was fabricated with the same process as that used in our mass-production lines. The essence of this high performance is derived from the excellent passivation ability of the HIT structure on c-Si. This report discusses research for excess of 20% efficiency HIT cell (/spl sim/100 cm/sup 2/), focusing on the a-Si passivation effect estimated from the carrier lifetime, and describes product development for the industrialization of HIT cells. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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