| Autor: |
J. Bok, A. Felder, T.F. Meister, M. Franosch, K. Aufinger, M. Wurzer, R. Schreiter, S. Boguth, L. Treitinger |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
1996 Symposium on VLSI Technology. Digest of Technical Papers. |
| DOI: |
10.1109/vlsit.1996.507812 |
| Popis: |
A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is presented. Very steep base profiles are realized by ion implantation and subsequent base diffusion. Cut-off frequencies and maximum oscillation frequencies of 50 GHz and ECL gate delay of 16 ps are obtained without increasing the process complexity in comparison to a 0.8 /spl mu/m production technology. A static 2:1 frequency divider operates up to 35 GHz, the highest value reported for any silicon based technology. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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