Ohmic contacts to n-type GaSb and n-type GalnAsSb
| Autor: | C.T. Harris, Robin K. Huang, Michael K. Connors, Christine A. Wang, D.A. Shiau |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Solid-state physics business.industry Electron concentration Doping Electron Condensed Matter Physics Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Ohmic contact Sheet resistance |
| Zdroj: | Journal of Electronic Materials. 33:1406-1410 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples were fabricated into mesa-etched, transfer-length method (TLM) structures, and the specific-contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific-contact resistivities of about 2 × 10−6 Ω-cm2 and sheet resistances of about 4 Ω/▭ are found for n-type GaInAsSb doped at about 3 × 1018 cm−3. |
| Databáze: | OpenAIRE |
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