Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Autor:	Takuji Hosoi, Shuji Azumo, Hirokazu Asahara, Yuki Nakano, Tsunenobu Kimoto, Ryota Nakamura, Shigetoshi Hosaka, Shuhei Mitani, Yusaku Kashiwagi, Takayoshi Shimura, Takashi Nakamura, Heiji Watanabe
Rok vydání:	2012
Předmět:	Reliability (semiconductor) Materials science Planar Computer simulation business.industry Trench Gate dielectric Electronic engineering Optoelectronics Dielectric Power MOSFET business High-κ dielectric
Zdroj:	2012 International Electron Devices Meeting.
Popis:	We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO 2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a7e54bfba51bfd0462fb0f045032548 https://doi.org/10.1109/iedm.2012.6478998 Zobrazit plný text záznamu