Special RF/microwave devices in Silicon-on-Glass Technology
| Autor: | T.L.M. Scholtes, S. Milosavljevic, F. Sarubbi, V. Gonda, Koen Buisman, Lis K. Nanver, L.C.N. de Vreede, Hugo Schellevis, E.J.G. Goudena, M. Popadic, G. Lorito, Cong Huang, L. La Spina |
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| Rok vydání: | 2008 |
| Předmět: |
Resistive touchscreen
Materials science Silicon business.industry Capacitive sensing Silicon on insulator chemistry.chemical_element Substrate (electronics) Silicon-germanium chemistry.chemical_compound chemistry Electronic engineering Optoelectronics Parasitic extraction business Electronic circuit |
| Zdroj: | 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. |
| Popis: | This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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