| Autor: |
J.B Smathers, Paul Thibado, Z. Ding, D. W. Bullock, Vincent LaBella, Haeyeon Yang |
| Rok vydání: |
1999 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. :88-92 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(98)01296-2 |
| Popis: |
The pure migration of individual Ga atoms on the technologically important GaAs(0 0 1)-(2]4) reconstructed surface has been studied as a function of substrate temperature using a combined molecular beam epitaxy and scanning tunneling microscopy (STM) ultra-high vacuum, multi-chamber facility. We have successfully deposited 1 10 of a plane of Ga atoms onto a pristine GaAs surface under a constant As 4 beam equivalent pressure of 10~6 Torr, at various substrate temperatures. After deposition the substrate was quenched to room temperature and transferred to the surface analysis chamber for STM imaging. A plot of the number density of islands formed as a function of deposition temperature follows an Arrhenius relationship. Assuming either a pure one-dimensional di!usion model or a pure isotropic two-dimensional di!usion model, the activation energy for di!usion is 2.3 or 1.7 eV, respectively. ( 1999 Elsevier Science B.V. All rights reserved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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