The Role of Ti Capping Layer in HfO x -Based RRAM Devices

Autor:	Zhi Xian Chen, Yan Zhe Tang, Dim-Lee Kwong, Zheng Fang, Bao Bin Weng, X. P. Wang, Joon Sohn, J. Provine, Zhiping Zhang, Guo-Qiang Lo, H.-S. Philip Wong, S. Simon Wong
Rok vydání:	2014
Předmět:	Materials science business.industry Forming processes Nanotechnology Memory performance Electronic Optical and Magnetic Materials Resistive random-access memory Resistive switching Memory window Optoelectronics Electrical and Electronic Engineering business Layer (electronics) Voltage
Zdroj:	IEEE Electron Device Letters. 35:912-914
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2014.2334311
Popis:	In this letter, we examine the role of the Ti capping layer in HfO x -based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a761088696715f9ba9981cfe604774d https://doi.org/10.1109/led.2014.2334311 Zobrazit plný text záznamu