A two-stage monolithic IF amplifier utilizing a Ta2O5capacitor

Autor:	W.J. Piacentini, J.P. Donnelly, L.J. Mahoney, W.E. Courtney, M.C. Finn, M.E. Elta, A. Chu
Rok vydání:	1983
Předmět:	Materials science business.industry Amplifier Electrical engineering Integrated circuit Noise figure Capacitance Electronic Optical and Magnetic Materials law.invention Capacitor law Optoelectronics Electrical and Electronic Engineering Thin film business Microwave Electronic circuit
Zdroj:	IEEE Transactions on Electron Devices. 30:21-26
ISSN:	1557-9646 0018-9383
DOI:	10.1109/t-ed.1983.21064
Popis:	A two-stage monolithic IF amplifier incorporating a sputtered Ta 2 O 5 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta 2 O 5 , Ta, and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates particulate contamination. As a result, a thin pinhole-free dielectric layer can be deposited over large areas, and 140-pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/mm2available with the present process has the potential for reducing the size of matching and bias circuits in microwave monolithic circuits and hybrid thin-film circuits. The monolithic amplifiers exhibit a gain of 17.5 ± 1.0 dB from 1.2 to 2.6 GHz and a minimum noise figure of ∼ 2.7 dB, with an associated gain of 17.5 dB at 1.7 GHz.
Databáze:	OpenAIRE
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