Characterization and Piezoelectric Properties of Reactively Sputtered (Sc, Al)N Thin Films on Diamond Structure

Autor:	Ding Fwu Lii, Jow-Lay Huang, Meng Ying Wu, Sean Wu
Rok vydání:	2013
Předmět:	Marketing Materials science Piezoelectric coefficient Silicon Annealing (metallurgy) Metallurgy Analytical chemistry chemistry.chemical_element Nitride Condensed Matter Physics chemistry Materials Chemistry Ceramics and Composites Diamond cubic Scandium Thin film Wurtzite crystal structure
Zdroj:	International Journal of Applied Ceramic Technology. 11:894-900
ISSN:	1546-542X
DOI:	10.1111/ijac.12068
Popis:	Highly oriented wurtzite (Sc, Al)N films were deposited on a diamond/silicon by a co-sputtering system. The results showed that the formation of ScxAl1−xN alloys causes a lattice distortion during the phase transition, and this intermediate phase induces a large piezoelectric response. When the scandium concentration increased up to the solution limit of scandium in aluminum nitride (measured data are about 12 at.%), the piezoelectric coefficient of (Sc, Al)N film is four times larger than pure AlN layer. After annealing process, the d33 value of (Sc, Al)N can be increased to a maximum of 20.073 pC/N.
Databáze:	OpenAIRE
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