Modeling of electron scattering in thin manganese films on silicon by Monte Carlo methods

Autor:	K. Tökési, D. Varga, Takeshi Mukoyama, L. Kövér, A. Némethy
Rok vydání:	1996
Předmět:	Materials science Silicon Electron energy loss spectroscopy Monte Carlo method General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Manganese Electron Condensed Matter::Materials Science X-ray photoelectron spectroscopy chemistry Atomic physics Electron scattering
Zdroj:	Journal of Applied Physics. 79:3763-3769
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.361211
Popis:	The electron energy distribution of the backscattered electrons from manganese and manganese films deposited on a silicon substrate was studied. The Monte Carlo technique was used to simulate the backscattered electron energy distributions and these were compared with the measured reflected electron spectra. A good agreement was found in general between our calculations and the experimental results. In addition, the applicability of Tougaard’s method for the determination of the energy loss function from reflected electron energy loss spectroscopy and simulated backscattered electron spectra of manganese films deposited on a silicon substrate were investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a5591b6e88888bf05bae6895ce6484b https://doi.org/10.1063/1.361211 Zobrazit plný text záznamu