100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Autor:	Jeff Nasadoski, Richard Alfred Beaupre, Rosa Ana Conte, Zachary Stum, Steve Arthur, Kevin Matocha, Ljubisa Dragoljub Stevanovic, Eladio Delgado, Keith Monaghan, J. L. Garrett, Peter Almern Losee, R. Ramakrishna Rao, Adam Gregory Pautsch
Rok vydání:	2009
Předmět:	Materials science business.industry Power switching Mechanical Engineering Electrical engineering Volt Schottky diode Condensed Matter Physics Die (integrated circuit) chemistry.chemical_compound chemistry Mechanics of Materials Power module MOSFET Silicon carbide General Materials Science business
Zdroj:	Materials Science Forum. :899-902
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.615-617.899
Popis:	The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200°C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a4a3d0f14730f3b893232145036bfc3 https://doi.org/10.4028/www.scientific.net/msf.615-617.899 Zobrazit plný text záznamu