Lithium‐ion mobility improvement in floating‐zone silicon by external gettering

Autor:	Y. K. Wong, J. T. Walton, N. Derhacobian, Eugene E. Haller
Rok vydání:	1993
Předmět:	Zone melting Fabrication Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Crystallographic defect Semiconductor detector chemistry Getter Optoelectronics Wafer Lithium business Nuclear chemistry
Zdroj:	Applied Physics Letters. 63:343-345
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.110037
Popis:	Phosphorous diffusion for approximately 1 h at 950 °C is shown to be an effective gettering procedure to remove lithium‐ion mobility reducing defects in floating‐zone p‐type silicon wafers. The removal of these defects, which can severely impede the movement of lithium ions in silicon wafers during lithium‐ion compensation process, is crucial in the fabrication of silicon lithium‐drifted radiation detectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a43b9f604d7b078efa9db7ecc51f5ad https://doi.org/10.1063/1.110037 Zobrazit plný text záznamu