Phosphosilicate Glass Stabilization of MOS Structures

Autor:	L. H. Kaplan, M. E. Lowe
Rok vydání:	1971
Předmět:	Materials science Renewable Energy Sustainability and the Environment Materials Chemistry Electrochemistry Composite material Condensed Matter Physics Phosphosilicate glass Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Journal of The Electrochemical Society. 118:1649-1653
ISSN:	1945-7111 0013-4651
DOI:	10.1149/1.2407803
Popis:	The flatband voltage and stability of metal‐glass‐oxide‐silicon (MGOS) systems were studied for phosphosilicate glass layers of varying thickness and composition. Thickness from 30 to 200Aå and compositions from 1 to 6 mole per cent (m/o) P 2 O 5 were used with a total insulator thickness of 500Aå. Electrical properties were measured after contamination (before metallization) of 4 different levels of sodium ranging from approximately 1011 to 1014/cm2. The initial flatband voltage was found to be linear with both sodium contamination and PSG thickness. The δ V FB shift (due to +10V bias at 200°C for 10 min) is a decreasing linear function of the product of thickness and P 2 O 5 concentration up to a value of ( t PSG × M % ) sufficient to trap all sodium. At higher PSG levels, the δ V FB increases. For a desired level of Na protection, the thickness—mole per cent product needed, can be determined by the figures supplied.
Databáze:	OpenAIRE
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