Improvement of the structural and electrical properties of InAsSb epilayer using Sb-rich InAsSb buffer layer grown by hot wall epitaxy

Autor:	Tadanobu Koyama, Yasuhiro Hayakawa, S. Nakamura, Masashi Kumagawa, P. Jayavel
Rok vydání:	2005
Předmět:	Diffraction Electron mobility Chemistry Scanning electron microscope Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Inorganic Chemistry Crystallography Hall effect X-ray crystallography Homogeneity (physics) Materials Chemistry Arsenic
Zdroj:	Journal of Crystal Growth. 280:26-31
ISSN:	0022-0248
Popis:	We have investigated the crystalline quality of InAsxSb1−x epilayers grown on Sb-rich InAsSb buffer layer and on GaAs (0 0 1) substrates by hot wall epitaxy (HWE). The epilayers are grown at different arsenic (As) temperatures of 250, 270 and 280 °C. X-ray diffraction results indicate that the arsenic composition (x) of the epilayer is increased with increasing As temperature. It is observed that the crystalline quality of the epilayers with x = 0.2 and 0.6 has been improved by using the buffer layer. Scanning electron micrograph of the epilayer with As composition of x = 0.2 shows a homogeneous surface morphology with respect to the epilayer directly grown on GaAs substrates. On the other hand, the quality and homogeneity of the epilayers having x = 0.8 deteriorate despite the growth of the buffer layer due to relatively large lattice mismatch between the epilayer and GaAs substrate. Hall effect measurements of the samples ( x = 0.2 and 0.6) demonstrate an increase in the electron mobility of the layer while it is decreased for the samples with x = 0.8 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a36274ad85c4cd05db445eb1793ac99 https://doi.org/10.1016/j.jcrysgro.2005.03.026 Zobrazit plný text záznamu Full Text from ScienceDirect