| Autor: |
Chuck Le, Pat McGinnis, John Sylvestri, Dave Albert, M. Ali, Phong T. Tran, Danielle Floyd, Steve Boettcher, Mike Tenney, Larry Fischer, Greg Hornicek, G. Lian, Zhigang Song |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
International Symposium for Testing and Failure Analysis. |
| ISSN: |
0890-1740 |
| DOI: |
10.31399/asm.cp.istfa2020p0061 |
| Popis: |
Failure analysis plays a very important role in semiconductor industry. Photon Emission Microscopy (PEM) has been extensively used in localization of fails in microelectronic devices. However, PEM emission site is not necessarily at the location of the defect. Thus, it has limitation for the success rate of the follow-up physical failure analysis focusing on the emission site. As semiconductor technology advanced in the 3D FinFET realm and feature size further shrank down, the invisible defects during SEM inspection are tremendously increased. It leads to the success rate further decreasing. To maintain good success rate of failure analysis for advanced 3D FinFET technology, electrical probing is necessary to be incorporated into the failure analysis flow. In this paper, first, the statistic results of PEM emission sites versus real defect locations from 102 modules of microprocessors manufactured by 14nm 3D FinFET technology was present. Then, we will present how to wisely design electrical probing plan after PEM analysis. The electrical probing plans are tailored to different scan chain and ATPG failures of microprocessors for improving failure analysis success rate without increasing too much turn-around time. Finally, two case studies have been described to demonstrate how the electrical probing results guide the follow-up physical failure analysis to find the defect. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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