Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
| Autor: | Yue Kuo, Xiaoning Zhang, Lingguang Liu, Jinshou Tian, Yuanyuan Lin, Yaogong Wang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element 02 engineering and technology Substrate (electronics) 01 natural sciences law.invention law Electric field 0103 physical sciences Nano General Materials Science Electrical conductor 010302 applied physics business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics Emission intensity chemistry Mechanics of Materials Optoelectronics Light emission 0210 nano-technology business Light-emitting diode |
| Zdroj: | Materials Science in Semiconductor Processing. 93:226-230 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2019.01.010 |
| Popis: | Auxiliary structure of nano-pinnacle is prepared on silicon substrate of SSI-LEDs device, and the micro-structure properties, electrical and optical characteristics of the proposed structure device are investigated. Non-uniform size and geometry of nano-pinnacles are prepared by wet-etching, and the most frequent geometry is ~230 × 140 nm pyramids. With help of the nano-pinnacle structure, the electric field strength distributed on treated surface of the nano-pinnacle sample is enhanced by ~4 times, resulting in the increase of the density of conductive paths by 3.6 times. By exploring the electrical and optical results, the onset voltage of light emission is decreased by 60% from − 7.6 V to − 3.4 V, and the emission intensity and efficiency are improved by ~9 times and ~8 times, respectively compared with the traditional structure device of SSI-LEDs. |
| Databáze: | OpenAIRE |
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