Molybdenum carbonitride deposited by plasma atomic layer deposition as a Schottky contact to gallium nitride

Autor:	Ian E. Campbell, A. D. Agyapong, Suzanne E. Mohney, Alex Molina, Timothy N. Walter
Rok vydání:	2021
Předmět:	Materials science Physics and Astronomy (miscellaneous) Schottky barrier Analytical chemistry Schottky diode chemistry.chemical_element Gallium nitride Nitride Atomic layer deposition chemistry.chemical_compound chemistry Molybdenum Remote plasma Selected area diffraction
Zdroj:	Applied Physics Letters. 119:102102
ISSN:	1077-3118 0003-6951
DOI:	10.1063/5.0062140
Popis:	Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior with a barrier height of 0.87 ± 0.01 eV and an ideality factor of 1.02 ± 0.01 after annealing at 600 °C in N2. These characteristics surpass those of pure metal nitride Schottky diodes, possibly due to work function engineering due to the incorporation of C and use of a remote plasma to avoid process-induced defects. According to x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, the film composition is approximately MoC0.3N0.7. Grazing incidence x-ray diffraction and plan-view transmission electron microscopy selected area electron diffraction are consistent with a rock salt structure with a lattice parameter of 0.42 nm.
Databáze:	OpenAIRE
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