Intermetallic Compound Growth and Stress Development in Al-Cu Diffusion Couple

Autor: V. Ouvarov-Bancalero, Seung H. Chae, Choong-Un Kim, Luu Nguyen, M. Mishler
Rok vydání: 2017
Předmět:
Zdroj: Journal of Electronic Materials. 47:855-865
ISSN: 1543-186X
0361-5235
DOI: 10.1007/s11664-017-5877-y
Popis: This paper reports experimental observations evidencing that the intermetallic compound phase interfaced with Cu in the Al-Cu diffusion couple is most likely α2-Cu3Al phase, not γ-Cu9Al4 phase as previously assumed, and that its growth to a critical thickness may result in interface failure by stress-driven fracture. These conclusions are made based on an interdiffusion study of a diffusion couple made of a thick Cu plate coated with ∼ 2-μm-thick Al thin film. The interface microstructure and lattice parameter were characterized using scanning electron microscopy and x-ray diffraction analysis. Specimens aged at temperature between 623 K (350°C) and 723 K (450°C) for various hours produced consistent results supporting the main conclusions. It is found that disordered α2-Cu3Al phase grows in a similar manner to solid-state epitaxy, probably owing to its structural similarity to the Cu lattice. The increase in the interface strain that accompanies the α2-Cu3Al phase growth ultimately leads to interface fracture proceeding from crack initiation and growth along the interface. This mechanism provides the most consistent explanation for interface failures observed in other studies.
Databáze: OpenAIRE
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