The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

Autor:	Srinivasan Chakravarthi, Vijay Reddy, C. Bowen, Rajesh Khamankar, P.E. Nicollian, Anand T. Krishnan, C. Chancellor
Rok vydání:	2007
Předmět:	Trap (computing) Condensed matter physics Dielectric strength Chemistry Gate dielectric Electrical breakdown Electronic engineering Breakdown voltage Time-dependent gate oxide breakdown Physics::Atomic Physics Low voltage Anode
Zdroj:	2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
DOI:	10.1109/relphy.2007.369892
Popis:	This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a2246fa1b50db80af9f98a5dfbd46ab https://doi.org/10.1109/relphy.2007.369892 Zobrazit plný text záznamu