Localized state effects in polymer thin film transistors
| Autor: | Alberto Salleo, Michael L. Chabinyc, R. A. Street, Kateri E. Paul |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
chemistry.chemical_classification
Electron mobility Bipolaron Fabrication Materials science business.industry Polymer Condensed Matter Physics Electronic Optical and Magnetic Materials Active matrix law.invention chemistry.chemical_compound Polyfluorene chemistry law Thin-film transistor Materials Chemistry Ceramics and Composites Polythiophene Optoelectronics business |
| Zdroj: | Journal of Non-Crystalline Solids. :607-611 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2004.03.052 |
| Popis: | Polymer semiconductors are of increasing interest for thin film transistors (TFT) and active matrix arrays, since their mobility is up to ∼0.1 cm 2 /V s, and they offer simple fabrication by solution-based printing. To understand the role of disorder and localized states in the polymers, we measure p-channel polythiophene and polyfluorene TFTs, using both spin-coated and jet-printed films, and infer localized states properties from the TFT characteristics. Bias stress effects occur in the polymer TFTs, which exhibit a threshold shift without significant change in mobility. Holes are removed from the channel at a rate proportional to the square of their concentration, suggesting the slow formation of hole bipolarons. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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