Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

Autor:	A. Guzmán, Javier Miguel-Sánchez, Adrian Hierro, JM José Maria Ulloa, E. Muñoz
Rok vydání:	2004
Předmět:	Photoluminescence Materials science Computer Networks and Communications business.industry Plasma Laser Atomic and Molecular Physics and Optics law.invention Magnetic field Ion law Optoelectronics Electrical and Electronic Engineering business Quantum well Diode Molecular beam epitaxy
Zdroj:	IEE Proceedings - Optoelectronics. 151:305-308
ISSN:	1359-7078 1350-2433
DOI:	10.1049/ip-opt:20040910
Popis:	The advantages of the InGaAsN/GaAs system comprising the active layers of single- and multi-quantum well laser diodes (emission wavelengths in the second and third optical windows, AlGaAs reflectors etc.), in comparison with other materials, make this quaternary material an interesting field for study. The monoatomic nitrogen species required for the growth of InGaAsN layers by molecular beam epitaxy, using a radiofrequency power source, are mixed in the plasma with ionised species, among others. The authors present a detailed characterisation of the plasma in the vicinity of the growing surface by measuring its I–V characteristics. A magnetic field was used to deflect ions and their effect on the properties of InGaAsN quantum wells was observed. These ionised species were observed to damage the surface, introducing nonradiative centres. As observed by photoluminescence experiments, the optical quality is improved as the density of ions impinging on the surface is reduced. Rapid thermal annealing experiments were also carried out, showing that the observed PL intensity improvement is related to the ion concentration in the quantum wells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4a1b57899aa85d6c16e8efce7eb4047a https://doi.org/10.1049/ip-opt:20040910 Zobrazit plný text záznamu