Clustering-induced phonon linewidth anomalies inAlxGa1−xAs
| Autor: | O. Brafman, Dan Fekete, R. Sarfaty, Manor R |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
X-ray absorption spectroscopy Materials science Photoluminescence Phonon Molecular physics Condensed Matter::Materials Science symbols.namesake Laser linewidth Nuclear magnetic resonance chemistry symbols Raman spectroscopy Luminescence Inorganic compound Raman scattering |
| Zdroj: | Physical Review B. 47:9492-9500 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.47.9492 |
| Popis: | We assume that Al x Ga 1-x As layers may be classified into two general groups of different configurations: one consisting of mesoscopic-size clusters differing in their cation content, but otherwise fairly homogeneous (I), while in the other the cation concentration fluctuates statistically on a microscopic scale about a well-defined average (II). In this way we explain the distinct behavior of these two classes of samples. In group I, phonon lines are broad but reasonably symmetric, room-temperature luminescence is present and a second-order resonant Raman spectrum is observed. In group II, phonon lines are narrow but asymmetric, no luminescence and no second-order Raman could be detected |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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