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Bending of a micron-size single-crystalline beam is analyzed using both discrete-dislocation plasticity and crystal-plasticity formulations. Within the discrete-dislocation plasticity formulation, dislocations are treated as infinitely long straight-line defects residing within a linear elastic continuum. Evolution of the dislocation structure during bending is simulated by allowing the dislocations to glide in response to long-range interactions between different dislocations, and between dislocations and the applied stresses, and by incorporating various short-range reactions which can result in dislocation nucleation, annihilation or pinning. At each stage of bending, the stress and deformation fields are obtained by superposing the dislocation fields and the complementary fields obtained as a solution of the corresponding linear-elastic boundary value problem. The results obtained show that there is a continuing accumulation of “geometrically necessary” dislocations during bending which is expected due to the gradient in the strain throughout the beam height. In addition, it is found that localization of plastic flow into slip bands is a salient feature of materials deformation at the micron-length scale. Within the crystal-plasticity analysis, of beam bending, a small displacement gradient formulation is used and the material parameters selected in such a way that plastic flow localizes into deformation bands at low strains. It is found that, while the global response of the beam predicted by the two approaches can be quite comparable, fine details of the dislocation-based stress and deformation fields cannot be reproduced by the continuum crystal-plasticity model. |
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