Transmission probability and energy distribution of electrons impinging on indium thin film targets
| Autor: | M. Hannachi, Christophe Champion, N. Bouarissa, Z. Rouabah |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Monte Carlo method chemistry.chemical_element 02 engineering and technology Electron 01 natural sciences Optics 0103 physical sciences Materials Chemistry Thin film Penetration depth Energy distribution 010304 chemical physics Condensed matter physics business.industry Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films chemistry Transmission (telecommunications) 0210 nano-technology business Electron scattering Indium |
| Zdroj: | Surface and Interface Analysis. 49:570-572 |
| ISSN: | 0142-2421 |
| DOI: | 10.1002/sia.6194 |
| Popis: | Based on a home-made Monte Carlo simulation, the electron backscattering coefficient, mean penetration depth, transmission probability, and transmission energy distribution of 1–5 keV electron normally incident penetrating in indium thin film targets have been computed. The trend of all features of interest as a function of the indium film thickness at both nanometric scale region and bulk material region has been examined and discussed. The present predictions may be seen as the first investigation regarding 1–5 keV electrons impinging on indium thin film targets. Copyright © 2016 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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