Low temperature silicon epitaxy using supersonic molecular beams
| Autor: | Erdogan Gulari, S. H. Li, Jasprit Singh, Palla K. Bhattacharya, Rajeev Malik |
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| Rok vydání: | 1995 |
| Předmět: |
Arrhenius equation
Reflection high-energy electron diffraction Silicon business.industry Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Inorganic Chemistry symbols.namesake Optics Electron diffraction chemistry Transmission electron microscopy Materials Chemistry symbols Thin film business |
| Zdroj: | Journal of Crystal Growth. 150:984-988 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)80087-s |
| Popis: | Epitaxy of silicon using a non-Maxwellian beam source is demonstrated. Pulses of monoenergetic, high kinetic energy supersonic beams of a Si 2 H 6 -H 6 mixture are directed at the substrate leading to epitaxial growth. Reflection high energy electron diffraction (RHEED) intensity variations are observed for low temperature growth (< 500°C) of silicon on Si(100). Arrhenius plots from these data indicate surface hydrogen desorption processes. Cross sectional transmission electron microscopy has been used to characterize the thin films for thickness and crystallinity. Results show that good quality crystalline films can be obtained at temperatures as low as 300°C with this novel technique |
| Databáze: | OpenAIRE |
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