Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
| Autor: | Kunal Mukherjee, Mike Salmon, Jennifer Selvidge, Robert W. Herrick, Daehwan Jung, Aidan A. Taylor, Alan Y. Liu, Justin Norman, John E. Bowers |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Silicon General Physics and Astronomy chemistry.chemical_element Cathodoluminescence 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry Quantum dot Quantum dot laser Vacancy defect 0103 physical sciences Climb Spontaneous emission Dislocation 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 128:025703 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers. |
| Databáze: | OpenAIRE |
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