The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
| Autor: | Peng Chen, Menghan Liu, Xiangqian Xiu, Yi Shi, Bin Liu, Peng Gao, Zili Xie, Ya-Ying Liu, Ningze Zhuo, Ping Han, Youdou Zheng, Huajie Fang, Fulong Jiang, Rong Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Superlattice Wide-bandgap semiconductor 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Pulsed laser deposition Excited state Electric field 0103 physical sciences Optoelectronics Voltage droop Spontaneous emission Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | IEEE Photonics Journal. 10:1-9 |
| ISSN: | 1943-0647 |
| DOI: | 10.1109/jphot.2018.2820692 |
| Popis: | We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 1020 cm−3. Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition. |
| Databáze: | OpenAIRE |
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