On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering
| Autor: | Gennadi Bersuker, P. Zeitzoff, John R. Barker, Scott Roy, Asen Asenov, Jeremy R. Watling, Giulio Ferrari |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Gate dielectric chemistry.chemical_element Equivalent oxide thickness Time-dependent gate oxide breakdown Dielectric Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Hafnium chemistry Modeling and Simulation Optoelectronics Electrical and Electronic Engineering business Plasmon High-κ dielectric Leakage (electronics) |
| Zdroj: | Journal of Computational Electronics. 6:1-5 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-006-0059-9 |
| Popis: | HfO2 based high-κ dielectrics are among the most likely candidates to replace SiO2 and the currently favoured oxinitride in the next generation of MOSFETs. High-κ materials allow the use of a thicker gate dielectric, maintaining the gate capacitance at reduced gate leakage. However, they lead to mobility degradation due to among other factors the coupling of carriers to surface soft optical phonons. Comparing the vertical field dependence of the mobility for HfO2 and SiO2, the severe degradation in mobility in the presence of high-κ becomes evident. The introduction of a SiO2 interfacial layer between the channel and the HfO2 mitigates the interaction with the SO phonons, but increases the equivalent oxide thickness (EOT) of the gate dielectric. The material of choice for the first commercial introduction of high-κ gate stacks is Hafnium Silicate (SixHf1-xO2). This alloy stands up better to the processing challenges and as a result suffers less from dielectric fluctuations. |
| Databáze: | OpenAIRE |
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