Grain size effects on contact resistance of top-contact pentacene TFTs
| Autor: | Hyungcheol Shin, Jong Duk Lee, Keum Dong Jung, Byung-Gook Park, Sung Hun Jin |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Mechanical Engineering Contact resistance Metals and Alloys Analytical chemistry Activation energy Condensed Matter Physics Grain size Electronic Optical and Magnetic Materials Pentacene Organic semiconductor chemistry.chemical_compound chemistry Mechanics of Materials Thin-film transistor Parasitic element Materials Chemistry Grain boundary |
| Zdroj: | Synthetic Metals. 156:196-201 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/j.synthmet.2005.11.012 |
| Popis: | Multiple top-contact OTFTs with various channel lengths ( L c ) were successfully scaled-down to the L c of 1.8 μm by using the membrane shadow mask and the interface between the evaporated Au and pentacene was analyzed based on the channel resistance method. For large grain pentacene (S-80) deposited at 80 °C, the parasitic resistance ( R p ) at V GS = −20 V has 1.8 ± 0.2 kΩ cm, whereas for small grain pentacene (S-20) deposited at 20 °C has 4.2 ± 0.2 kΩ cm, which means that R p depends on the grain size of pentacene. The grain size and grain boundary trap density for pentacene can be possibly origins to determine R p, which is critically correlated with bulk transport in pentacene. The grain boundary trap density ( N t ) for S-80 and S-20 was extracted as (5.6 ± 0.5) × 10 11 and (1.2 ± 0.3) × 10 12 cm −2 from the Levinson plots, respectively. In addition, activation energy of R p for S-80 is in the range from 42 to 48 meV, whereas for S-20 is from 72 to 108 meV. |
| Databáze: | OpenAIRE |
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