Electrical Performance Analysis of AlGaN/AlN/Sapphire MSM Photodetector for Threshold Voltage Using Varying Doping Levels
| Autor: | Harpreet Kaur, Harsimranjit Kaur, Manish Kumar Hooda |
|---|---|
| Rok vydání: | 2022 |
| Zdroj: | ECS Transactions. 107:9905-9914 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | It has been demonstrated in past studies that doping concentration of photo-absorbing layer has a significant impact on the electrical characteristic of MSM detectors. However, effect of doping concentration on threshold voltage and over desired RB (Reverse Bias) range of AlGaN MSM detectors is studied in few research reports. In the present study, photocurrent at threshold voltage and beyond it have been investigated for 1e18 cm-3 and 1e19 cm-3 doping concentrations basedAl0.5Ga0.5N/AlN/Sapphire MSM detectors. For both detectors, key electrical parameters like electric field, dark current density, and recombination rate at the top surface have been analyzed using I-V characteristics and cut-line plots extracted by Atlas simulator. It is observed that the magnitude of photocurrent and threshold voltage remains very high of higher doping detector as compared to lightly doped case. Thus comparative analysis can be helpful for selecting suitable doping at particular bias for high performance, low noise communication, and reliable UV detection applications. |
| Databáze: | OpenAIRE |
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