Films of degenerate intrinsic oxides of InSe and In4Se3 semiconductor crystals
| Autor: | V. M. Katerynchuk, M. Z. Kovalyuk |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Thermal oxidation
Materials science business.industry Degenerate energy levels Oxide Heterojunction Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Degenerate semiconductor chemistry.chemical_compound Semiconductor chemistry Optoelectronics business Layer (electronics) Diode |
| Zdroj: | Semiconductors. 44:1176-1179 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782610090125 |
| Popis: | The results of investigation of electric properties of oxide-p-InSe and oxide-p-In4Se3 heterojunctions, the front layer in which is obtained by the thermal oxidation of crystalline substrates, are presented. It is established that the forward portions of I–V characteristics of heterojunctions are similar to the forward portions of the I–V characteristics of metal-semiconductor diodes in which the majority carriers are involved in the charge transport. Therefore, the electric properties of heterojunctions are interpreted under the assumption that the intrinsic oxide is a degenerate semiconductor. For confirmation of the assumption, the data were compared to the results of the investigation carried out on the ITO-GaTe heterojunctions in which the ITO film was intentionally made degenerate. |
| Databáze: | OpenAIRE |
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