Bismuth telluride-based materials obtained by rapid quenching process
| Autor: | A.V. Alexeyev, M.F. Reznichenko, S.A. Gromilov, T.P. Koretskaya, B.M. Kuchumov |
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| Rok vydání: | 2008 |
| Předmět: |
Diffraction
Materials science Scanning electron microscope Annealing (metallurgy) Analytical chemistry General Chemistry Condensed Matter Physics Monocrystalline silicon chemistry.chemical_compound Thermoelectric figure of merit Crystallography Cooling rate chemistry Seebeck coefficient General Materials Science Bismuth telluride |
| Zdroj: | Journal of Physics and Chemistry of Solids. 69:680-684 |
| ISSN: | 0022-3697 |
| DOI: | 10.1016/j.jpcs.2007.07.091 |
| Popis: | Bi 2 Te 3-x Se x and Bi 2-y Sb y Te 3 thick films were obtained by a rapid quenching process. A cooling rate of the melt on Ni-Cu substrate was of the order of 10 4 -10 6 K/s. The thickness of the films varied in the range of 20-200 μm. The thick films obtained were annealed at 573 K for 1 h. Scanning electron microscopy and X-ray diffraction demonstrated a monocrystalline structure of the materials obtained at lower cooling rates. Thermoelectric figure of merit ZT of these materials was in the range 1.1 1.3. |
| Databáze: | OpenAIRE |
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