Observation of silicon etch pit formation in quiescent concentrated aqueous HF solutions
| Autor: | G. Willeke, K. Kellermann |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Materials science
Aqueous solution Silicon Mechanical Engineering technology industry and agriculture Analytical chemistry Mineralogy chemistry.chemical_element Condensed Matter Physics Electrochemistry Etch pit density chemistry Mechanics of Materials General Materials Science Crystalline silicon Porosity Dissolution Hillock |
| Zdroj: | Materials Letters. 19:7-12 |
| ISSN: | 0167-577X |
| Popis: | A new type of etch pit has been found in p-type Czochralski-grown crystalline silicon after long-time immersion in quiescent concentrated aqueous HF solutions. These etch pits of 80–300 μm diameter, which may be characterized by a center hillock surrounded by porous material, show the four-fold and three-fold symmetry of 〈100〉 and 〈111〉 oriented silicon, respectively. A formation mechanism is proposed, based on the presence of local p-n junctions due to oxygen related (thermal) donor formation. Ambient illumination is suggested to drive the electrochemical (anodic) dissolution process. |
| Databáze: | OpenAIRE |
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