| Autor: |
Peter I. Gaiduk, S. Schippel, A. Zentgraf, Konrad Gärtner |
| Rok vydání: |
1996 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 114:46-55 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(96)00050-x |
| Popis: |
(111) Si samples were implanted first with 250 keV Co + ions and afterwards with 30 keV Co + ions. In one case, the low-energy implantation is performed at an subcritical dose (provides no continuous CoSi 2 layer after annealing) and the high-energy implantation is performed at about the critical dose. In the other case the situation is vice versa. Additionally, a single implantation of 30 keV Co + ions at an subcritical dose was carried out. The evolution of the CoSi 2 crystallites in the non-continuous CoSi 2 layers has been investigated by RBS and TEM. It is shown to be different in Si predamaged by the previous Co implantation and in virgin Si. The damage accelerates the dissolution of the CoSi 2 crystallites and the growth of the continuous CoSi 2 layer. This ripening process is faster than Ostwald ripening because the damage enhances the contribution from the Co diffusion and, obviously, it makes the Si diffusion to contribute also to the ripening. The strain (one part of the damage) influences the shape and orientation of the CoSi 2 crystallites. This causes the CoSi 2 crystallites in predamaged Si to be always predominantly of A-type which explains the influence of the sequence of the implantations and annealing(s) on the orientation of the resulting CoSi 2 layer found in recent publications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect