Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation
| Autor: | Alex See, Chyiu Hyia Poon, Dong Gui, Meisheng Zhou, Yunling Tan |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 103:084906 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.2909957 |
| Popis: | For preamorphized boron-implanted samples subjected to nonmelt laser spike annealing (LSA), increasing the LSA temperature at temperatures below 1250 °C results in negligible sheet resistance changes due to the formation of inactive boron-interstitial clusters (BICs). These clusters, which are evidenced as a kink in the boron profile beyond the amorphous/crystalline interface, result chiefly from the inadequate removal of end-of-range (EOR) defects. When the LSA temperature is elevated beyond 1250 °C, sheet resistance improvement takes place due to the increase in active boron dose from the dissolution of the BIC at higher temperatures. Cluster dissolution also gives rise to a supersaturation of silicon interstitials that deepen the junctions as a result of transient enhanced diffusion (TED). With an additional post-LSA treatment, severe deactivation, especially at lower LSA temperatures, and further TED is observed. Two concurrent mechanisms, namely, boron clustering (which gives rise to deactivation and... |
| Databáze: | OpenAIRE |
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