Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt

Autor:	Husam N. Alshareef, A. Li-Fatou, Rohit Galatage, J. B. Shaw, Clive M. Freeman, R. A. Chapman, James J. Chambers, Erich Wimmer, Eric M. Vogel, Christopher L. Hinkle, Hiroaki Niimi
Rok vydání:	2010
Předmět:	Materials science business.industry International Electron Devices Meeting chemistry.chemical_element Cladding (fiber optics) PMOS logic chemistry MOSFET Electronic engineering Optoelectronics Work function business Metal gate Tin NMOS logic
Zdroj:	2010 Symposium on VLSI Technology.
Popis:	In this contribution, NMOS and PMOS band edge effective work function (EWF) and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme. For NMOS, the use of an Al cladding layer results in Vt = 0.08 V consistent with NMOS EWF = 4.15 eV. Migration of the Al cladding into the TiN and a relatively low oxygen concentration near the TiN/HfO 2 interface are responsible for the low EWF. For PMOS, employing a W cladding layer along with a post-TiN anneal in an oxidizing ambient results in elevated oxygen concentration near the TiN/HfO 2 interface and Vt = −0.20 V consistent with a PMOS EWF =5.05 eV. First-principles calculations indicate N atoms displaced from the TiN during the oxidizing anneal form dipoles at the TiN/HfO 2 interface that play a critical role in determining the PMOS EWF.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::498e92f37dff15d5e696a86b1a6ed4be https://doi.org/10.1109/vlsit.2010.5556220 Zobrazit plný text záznamu