Semiconductor flexoelectricity in graphite-doped SrTiO3 ceramics
| Autor: | Shuxuan Guo, Zhonghua Dai, Zhiguo Wang, Yun Gong |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Process Chemistry and Technology Doping Flexoelectricity 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystal Semiconductor Electrical resistivity and conductivity visual_art 0103 physical sciences Materials Chemistry Ceramics and Composites visual_art.visual_art_medium Ceramic 0210 nano-technology business |
| Zdroj: | Ceramics International. 47:6535-6539 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2020.10.239 |
| Popis: | Improving the flexoelectric coefficients of materials is of great significance and challenge in physics and material sciences. Herein, graphite was roughly added into a paraelectric SrTiO3 (STO) ceramic, in order to increase the dielectric permittivity and electrical conductivity, which brings minimized variations to crystal, both structure and microstructure. More importantly, the flexoelectric coefficient of the doped STO with 20 wt% C was found to experience a jump increase by an order of magnitude relative with the pure STO, which could be well interpreted by the occurrence of an interface layer between the semiconductor surface and the electrodes, whereby under bending, a large macroscopic polarization in the paraelectric ferroelectrics was generated. The facile strategy in this paper introduces a general way to probing the semiconductor flexoelectricity in the paraelectric ferroelectrics. |
| Databáze: | OpenAIRE |
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