Low magnetic field Impact on NBTI degradation
| Autor: | Becharia Nadji, Hakim Tahi, S. M. Merah |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Negative-bias temperature instability business.industry Transistor Relaxation (NMR) Life time Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Magnetic field law.invention Stress (mechanics) law Low magnetic field Electronic engineering Optoelectronics Degradation (geology) Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 55:1460-1463 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2015.06.137 |
| Popis: | This article presents the effect of low magnetic field (B < 10 mT) on both Negative Bias Temperature Instability (NBTI) stress and recovery. This effect is a study on commercial power double diffused MOS transistors (VDMOSFET). We show that the degradation is less important when the magnetic field is applied. The dynamic of the degradation change and the relaxation is accelerated. These results can give useful insight for understand the NBTI degradation mechanisms. In addition, it could be exploited to improve the VDMOS devices life time. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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