Compositional inhomogeneities in InGaN studied by transmission electron microscopy and spatially resolved cathodoluminescence

Autor:	Juergen Christen, Detlef Hommel, P. L. Ryder, H. Selke, Frank Bertram, Sven Einfeldt, M Amirsawadkouhi, T. Böttcher
Rok vydání:	1999
Předmět:	Materials science Mechanical Engineering Analytical chemistry Cathodoluminescence Condensed Matter Physics Microanalysis Wavelength Mechanics of Materials Transmission electron microscopy General Materials Science Thin film Luminescence Spectroscopy Molecular beam epitaxy
Zdroj:	Materials Science and Engineering: B. 59:279-282
ISSN:	0921-5107
Popis:	The structural and optical properties of InGaN epilayers grown by different molecular beam epitaxy (MBE) techniques were studied with high spatial resolution. Mappings of the local emission wavelength obtained by cathodoluminescence (CL) spectroscopy indicate lateral and spectral inhomogeneities in the luminescence of InGaN epilayers grown with continuous In and Ga fluxes. These results agree well with variations in the chemical composition in the lateral and in the growth direction seen in mappings of the local composition which were obtained by energy-dispersive X-ray (EDX) microanalysis in cross-sectional transmission electron microscopy (TEM). Possible origins of these variations are discussed. In comparison, epilayers grown with alternating deposition of (In, Ga)N and (Ga)N are more homogeneous.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::496619efcf7f8fdf5c0f8cfbcdbf7bde https://doi.org/10.1016/s0921-5107(98)00341-9 Zobrazit plný text záznamu Full Text from ScienceDirect