Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air
| Autor: | Hong-Liang Lu, Li-Li Zheng, Shi-Jin Ding, You-Hang Wang, Wen-Jun Liu, David Wei Zhang, Qian Ma |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Passivation Annealing (metallurgy) Transistor Analytical chemistry 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Threshold voltage Thin-film transistor law 0103 physical sciences Thermal Electronic engineering Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | IEEE Transactions on Electron Devices. 63:1893-1898 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2540679 |
| Popis: | High-performance thin-film transistors (TFTs) with atomic layer-deposited (ALD) ZnO channel/Al2O3 dielectric were fabricated under a maximum processing temperature of 200 °C. The effects of postannealing temperature and time on the performance of the TFT were investigated. Under annealing at 200 °C in air, the performance of the TFT was greatly improved by increasing the annealing time to 120 min, showing a very low OFF-current of $2.98\times 10^{-13}$ A, a small subthreshold swing (SS) of 244 mV/decade, a quite large $I_{\mathrm{\scriptscriptstyle ON}}/I_{{\mathrm{\scriptscriptstyle OFF}}}$ ratio of $4\times 10^{8}$ , and a high field-effect electron mobility of 21.9 cm2/ $\textrm {V}\cdot \textrm {s}$ . Furthermore, good electrical stabilities were also demonstrated under gate-bias stress, such as a threshold voltage shift ( $\Delta V_{\textrm {th}}$ ) of −1.1 V and a $\Delta $ SS of 86 mV/decade under −20 V for 3000 s, a $\Delta V_{\textrm {th}}$ of 0.29 V, and a $\Delta $ SS of −44 mV/decade under +20 V for 3000 s. The above results are attributed to the gradual passivation of oxygen vacancies in the ZnO channel and interface traps at the interface of ZnO/Al2O3 with an increment of annealing time. Thus, the current ZnO TFT with a low thermal budget and high performance is very promising for flexible electronic applications. |
| Databáze: | OpenAIRE |
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