Controlling the p-type conductivity of SnO by doping with nitrogen and hydrogen
| Autor: | S. Graubner, David Hartung, R. Hamann, Peter J. Klar, P. Hoffmann, Martin Becker, C. Voget-Grote, Angelika Polity, Carsten Ronning |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Dopant Doping Analytical chemistry General Physics and Astronomy 02 engineering and technology Activation energy Sputter deposition Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Acceptor Electrical resistivity and conductivity 0103 physical sciences Thin film 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 125:085703 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5052606 |
| Popis: | Two series of SnO thin films, one doped with N and one doped with H, were deposited on c-plane sapphire by reactive ion beam sputter deposition starting from growth parameters optimized for stoichiometric SnO. The amounts of dopants incorporated into the SnO:H and SnO:N samples were quantified by secondary ion mass spectroscopy. The influence on the structural and electrical properties of SnO thin films was studied as a function of dopant concentration. In the case of N doping, all N incorporated, probably as N O, are active as the acceptor and exhibit long-term stability. We assign an acceptor activation energy of 100 to 150 meV to N O. However, we observe a change in the film morphology at a critical N concentration of about 7 ⋅ 10 17 cm − 3, which deteriorates the structural properties of the films. In the case of SnO:H, the situation is different. We observe an outdiffusion of H after growth, i.e., the samples are not stable in the long term. Nevertheless, all H incorporated up to a H-content of 10 19 cm − 3 seem to be electrically active and exhibit an activation energy between 150 and 250 meV, likely corresponding to H i. Furthermore, at H contents above 10 19 cm − 3, we observe molecular H 2 inside the SnO:H thin films. We conclude that N doping of SnO is better suited for tuning the p-type conductivity of SnO. However, it will be essential to overcome the morphology change observed at the critical N concentration to fully explore the tunability of the p-type conductivity in device applications. |
| Databáze: | OpenAIRE |
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