Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

Autor:	B. Boudart, H. Toutah, C.O. Maiga, B. Tala-Ighil
Rok vydání:	2005
Předmět:	Stress (mechanics) Work (thermodynamics) Engineering Reliability (semiconductor) business.industry Bipolar junction transistor Electrical engineering Inverter Optoelectronics Power semiconductor device Insulated-gate bipolar transistor business Pulse-width modulation
Zdroj:	2005 European Conference on Power Electronics and Applications.
DOI:	10.1109/epe.2005.219370
Popis:	The work presented in this paper is concerned with the effects of a high temperature gate bias (HTGB) and a high temperature reverse bias (HTRB) stresses on non-punch-through IGBTs. The stresses were achieved during 1200 hours at 140degC. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a pulse width modulation (PWM) inverter operation is presented
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::494e2d188c001db8f69e2797b67a3633 https://doi.org/10.1109/epe.2005.219370 Zobrazit plný text záznamu