Refractive Index Profiles of Thermally Grown and Chemically Vapor Deposited Films on Silicon
| Autor: | S. Chongsawangvirod, J. P. Ellul, S. P. Tay, Eugene A. Irene, A. Kalnitsky |
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| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Materials science Silicon Renewable Energy Sustainability and the Environment business.industry chemistry.chemical_element Dielectric Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics chemistry Ellipsometry Materials Chemistry Electrochemistry Microelectronics Optoelectronics Thin film business Inorganic compound Refractive index |
| Zdroj: | Journal of The Electrochemical Society. 137:3536-3541 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2086263 |
| Popis: | Ellipsometry, although used extensively in the microelectronics field for the measurement of film thicknesses and refractive indices, does not usually yield reliable refractive indices for dielectric films less than 50 nm thick due to instrumental errors and software limitations. Addressing this issue, we report ellipsometric procedures that enable a reliable assessment of refractive index profiles for a variety of thermally grown and chemically vapor deposited, CVD, dielectric films on Si substrates down to about 10 nm thickness and we compare the results in terms of the current understanding about the film-substrate interface. In all cases studied we find that the interfacial region is optically different than the thick film, and that the precise film processing substantively alters the nature of the interface region. |
| Databáze: | OpenAIRE |
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