Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Autor:	Bernhard Urbaszek, B. C. Cavenett, S. A. Telfer, C B O'Donnell, Andrea Balocchi, Christian Morhain, P. Tomasini, Kevin Alan Prior, Xiaodong Tang
Rok vydání:	2001
Předmět:	Inorganic Chemistry Photoluminescence Chemistry Semiconductor materials Inorganic chemistry Materials Chemistry Wide-bandgap semiconductor Analytical chemistry Condensed Matter Physics Alloy composition Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :655-659
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)00792-8
Popis:	In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4943ef930585d4d7c1c802e069d7e1e5 https://doi.org/10.1016/s0022-0248(01)00792-8 Zobrazit plný text záznamu Full Text from ScienceDirect