A Molybdenum Dithiolene Complex as p-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation

Autor:	Yabing Qi, Alexander M. Kandabarow, Seth R. Marder, Tissa Sajoto, Eung Gun Kim, Antoine Kahn, Stephen Barlow, Robert Bartynski, Michael Kröger, Leonard C. Feldman, Wunjun Park, Jean-Luc Brédas, L. Wielunski
Rok vydání:	2009
Předmět:	Dopant Photoemission spectroscopy General Chemical Engineering Doping Analytical chemistry chemistry.chemical_element General Chemistry Activation energy Polaron Organic semiconductor chemistry Molybdenum Electron affinity Materials Chemistry
Zdroj:	Chemistry of Materials. 22:524-531
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm9031623
Popis:	Molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3) is investigated as a p-dopant for organic semiconductors. With an electron affinity of 5.6 eV, Mo(tfd)3 is a strong oxidizing agent suitable for the oxidation of several hole transport materials (HTMs). Ultraviolet photoemission spectroscopy confirms p-doping of the standard HTM N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′-diamine (α-NPD). Strong enhancement of hole injection at α-NPD/Au interfaces is achieved via doping-induced formation of a narrow depletion region in the organic semiconductor. Variable-temperature current−voltage measurements on α-NPD: Mo(tfd)3 (0−3.8 mol %) yield an activation energy for polaron transport that decreases with increasing doping concentration, which is consistent with the effect of the doping-induced filling of traps on hopping transport. Good stability of Mo(tfd)3 versus diffusion in the α-NPD host matrix is demonstrated by Rutherford backscattering for temperatures up to 110 °C. Densi...
Databáze:	OpenAIRE
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